Datasheet > IRLML5203TRPBF-1

IRLML5203TRPBF-1

更新时间： 2024-11-18 14:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	240K
描述
Small Signal Field-Effect Transistor

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中文翻译

获取价格

数据手册

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IRLML5203TRPBF-1 数据手册

IRLML5203PbF-1

HEXFET^®Power MOSFET

V_DS

-30

R_{DS(on) max}

(@V_GS= -10V)

R_{DS(on) max}

(@V_GS= -4.5V)

Q_{g (typical)}

I_D

165

9.5

Micro3^TM

-3.0

(@T_A= 25°C)

Features

Benefits

Industry-standard pinout SOT-23 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Base Part Number

Package Type

Micro3 (SOT-23)

Orderable Part Number

Form

Quantity

IRLML5203TRPbF-1

Tape and Reel

3000

IRLML5203TRPbF-1

™

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-30

-3.0

-2.4

-24

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.25

0.80

Power Dissipation

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 20

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

100

Units

°C/W

R_θJA

November 25, 2013

12 3 4 5 6 7...9

中文翻译

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