Datasheet > IRLML6344TR

IRLML6344TR

更新时间： 2024-09-26 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	393K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:5A;Vgs(th)(V):±12;漏源导通电阻:29mΩ@10V;漏源导通电阻:37mΩ@4.5V

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中文翻译

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数据手册

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IRLML6344TR 数据手册

UMW

IRLML6344

Features

SOT–23

VDS (V) = 30V

29m

37m

(V_GS

RDS(ON)

4.5V)

2.5V)

Application(s)

Load/ System Switch

1. GATE

Benefits

2. SOURCE

3. DRAIN

Lower Conduction Losses

Multi-vendor compatibility

Environmentally friendly

Increased Reliability

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

5.0

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

4.0

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

Maximum Power Dissipation

Linear Derating Factor

0.8

0.01

± 12

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R_θ

Junction-to-Ambient

100

°C/W

R_θ

Junction-to-Ambient (t<10s)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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