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IRLML6344 PDF预览

IRLML6344

更新时间: 2024-11-19 11:13:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 210K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 

IRLML6344 数据手册

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IRLML6344TRPbF  
HEXFET® Power MOSFET  
VDS  
30  
V
V
G
S
1
2
VGS Max  
± 12  
RDS(on) max  
(@VGS = 4.5V)  
3
D
29  
37  
mΩ  
mΩ  
TM  
Micro3 (SOT-23)  
RDS(on) max  
(@VGS = 2.5V)  
IRLML6344TRPbF  
Application(s)  
Load/ System Switch  
Features and Benefits  
Benefits  
Low RDSon (<29m )  
Ω
Lower Conduction Losses  
Multi-vendor compatibility  
Environmentally friendly  
Increased Reliability  
Industry-standard SOT-23 Package  
results in  
RoHS compliant containing no lead, no bromide and no halogen  
MSL1, Consumer Qualification  
Standard Pack  
Base Part Number  
Orderable Part Number  
Package Type  
Form  
Quantity  
IRLML6344TRPbF  
Micro3 (SOT-23)  
Tape and Reel  
3000  
IRLML6344TRPbF  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
V
VDS  
30  
5.0  
4.0  
25  
Drain-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
A
PD @TA = 25°C  
PD @TA = 70°C  
1.3  
0.8  
0.01  
± 12  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
100  
Units  
Rθ  
Junction-to-Ambient  
JA  
°C/W  
Rθ  
–––  
99  
JA  
Junction-to-Ambient (t<10s)  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
December 19, 2014  

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