Datasheet > IRLML6244TR

IRLML6244TR

更新时间： 2024-10-15 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	435K
描述
种类:N-Channel;漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时）:6.3A;Vgs(th)(V):±12;漏源导通电阻:mΩ@10V;漏源导通电阻:24mΩ@4.5V

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中文翻译

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数据手册

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IRLML6244TR 数据手册

UMW

IRLML6244

N-Channel MOSFET

Features

SOT–23

VDS (V) = 20V

RDS(ON)

24m (VGS = 4.5V)

31m (VGS = 2.5V)

Application(s)

Load/ System Switch

1. GATE

Benefits

2. SOURCE

3. DRAIN

Multi-vendor compatibility

Environmentally friendly

Increased Reliability

Absolute Maximum Ratings

6.3

Drain-Source Voltage

I_D@ T_A= 25°C

Continuous Drain Current, V_GS@ 10V

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

5.1

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

Maximum Power Dissipation

Linear Derating Factor

0.80

0.01

± 12

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

R_JA

–––

100

Junction-to-Ambient

Junction-to-Ambient (t<10s)

°C/W

JA

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width  400μs; duty cycle  2%.

Surface mounted on 1 in square Cu board.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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