Datasheet > IRLML6302PBF_07

IRLML6302PBF_07

更新时间： 2024-10-30 12:02:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	285K
描述
technology, Ultra Low On-Resistance, P-Channel MOSFET

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IRLML6302PBF_07 数据手册

PD - 94947B

IRLML6302PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l P-Channel MOSFET

l SOT-23 Footprint

V_DSS= -20V

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

R_DS(on)= 0.60Ω

l Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This

package, dubbed the Micro3, is ideal for applications

where printed circuit board space is at a premium. The

low profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards.

Micro3^TM

Absolute Maximum Ratings

Parameter

Max.

-0.78

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-0.62

-4.9

P_D@T_A= 25°C

Power Dissipation

540

mW/°C

Linear Derating Factor

4.3

V_GS

Gate-to-Source Voltage

± 12

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

-5.0

V/ns

°C

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Typ.

Max.

230

Units

°C/W

R_θJA

www.irf.com

08/27/07

12 3 4 5 6 7 8

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