Datasheet > IRLML6346

IRLML6346

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	776K
描述
SOT-23

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中文翻译

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数据手册

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IRLML6346 数据手册

IRLML6346

N-Channel Power MOSFET

FEATURES



Ultra low on-resistance:V_DS=30V,R_DS(ON)≤63mΩ@V_GS=4.5V,I_D=3.4A

For PWM application

For Load switch application

Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL f lammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DS

I_D@ T_A= 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.4

I_D@ T_A= 70°C

I_DM

2.7

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

Maximum Power Dissipation

0.8

0.01

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

± 12

Gate-to-Source Voltage

T_J,T_STG

R_JA

-55 to + 150

100

Junction and Storage Temperature Range

Junction-to-Ambient ③

°C

°C/W

R_JA

Junction-to-Ambient (t<10s)

Electric Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

Conditions

V_(BR)DSS

–––

V_GS= 0V, I_D= 250μA

V/°C Reference to 25°C, I_D= 1mA

_GS= 4.5V, I_D= 3.4A

V_(BR)DSS/T_J

R_DS(on)

Breakdown Voltage Temp. Coefficient

–––

0.5

0.02

0.8

–––

1.1

1.0



Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V_GS= 2.5V, I_D= 2.7A

V_DS= V_GS, I_D= 10μA

V_DS=24V, V_GS= 0V

V_GS(th)

–––

I_DSS

μA

Drain-to-Source Leakage Current

–––

150

100

-100

V_DS= 24V, V_GS= 0V, T_J= 125°C

V_GS= 12V

_GS= -12V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

R_G

gfs

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Internal Gate Resistance

Forward Transconductance

–––

9.5

3.9

–––



V_DS= 10V, I_D= 3.4A

I_D= 3.4A

V_DS=15V

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

2.9

0.13

1.1

3.3

4.0

–––

V_GS= 4.5V

V_DD=15V

I_D= 1.0A

R_G= 6.8

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

4.9

270

_GS= 4.5V

_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V_DS= 24V

ƒ = 1.0MHz

I_S

Continuous Source Current

MOSFET symbol

–––

1.3

(Body Diode)

Pulsed Source Current

showing the

integral reverse

I_SM

(Body Diode)

Diode Forward Voltage

p-n junction diode.

T_J= 25°C, I_S= 3.4A, V_GS= 0V

V_SD

t_rr

–––

8.8

2.7

1.2

Reverse Recovery Time

Reverse Recovery Charge

ns T_J= 25°C, V_R= 24V, I_F=1.3A

di/dt = 100A/μs

Q_rr

4.1

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width  400μs; duty cycle  2%.

Surface mounted on 1 in square Cu board.

1 /

E-mail:hkt@heketai.com

12 3 4 5 6

中文翻译

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与IRLML6346相关器件

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IRLML6346PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLML6346TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
IRLML6346TRPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRLML6346TRPBF	TYSEMI	获取价格	Industry-standard SOT-23 Package MSL1, Consumer Qualification Multi-vendor compatibility
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