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IRLML6344TRPBF PDF预览

IRLML6344TRPBF

更新时间: 2024-11-21 02:55:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 210K
描述
HEXFETPower MOSFET

IRLML6344TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, MICRO-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.12配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):5 A最大漏源导通电阻:0.029 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.3 W最大脉冲漏极电流 (IDM):25 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLML6344TRPBF 数据手册

 浏览型号IRLML6344TRPBF的Datasheet PDF文件第2页浏览型号IRLML6344TRPBF的Datasheet PDF文件第3页浏览型号IRLML6344TRPBF的Datasheet PDF文件第4页浏览型号IRLML6344TRPBF的Datasheet PDF文件第5页浏览型号IRLML6344TRPBF的Datasheet PDF文件第6页浏览型号IRLML6344TRPBF的Datasheet PDF文件第7页 
IRLML6344TRPbF  
HEXFET® Power MOSFET  
VDS  
30  
V
V
G
S
1
2
VGS Max  
± 12  
RDS(on) max  
(@VGS = 4.5V)  
3
D
29  
37  
mΩ  
mΩ  
TM  
Micro3 (SOT-23)  
RDS(on) max  
(@VGS = 2.5V)  
IRLML6344TRPbF  
Application(s)  
Load/ System Switch  
Features and Benefits  
Benefits  
Low RDSon (<29m )  
Ω
Lower Conduction Losses  
Multi-vendor compatibility  
Environmentally friendly  
Increased Reliability  
Industry-standard SOT-23 Package  
results in  
RoHS compliant containing no lead, no bromide and no halogen  
MSL1, Consumer Qualification  
Standard Pack  
Base Part Number  
Orderable Part Number  
Package Type  
Form  
Quantity  
IRLML6344TRPbF  
Micro3 (SOT-23)  
Tape and Reel  
3000  
IRLML6344TRPbF  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
V
VDS  
30  
5.0  
4.0  
25  
Drain-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
A
PD @TA = 25°C  
PD @TA = 70°C  
1.3  
0.8  
0.01  
± 12  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
100  
Units  
Rθ  
Junction-to-Ambient  
JA  
°C/W  
Rθ  
–––  
99  
JA  
Junction-to-Ambient (t<10s)  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
December 19, 2014  

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