Datasheet > IRLML6346TR

IRLML6346TR

更新时间： 2024-11-21 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	456K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:3.4A;Vgs(th)(V):±12;漏源导通电阻:mΩ@10V;漏源导通电阻:63mΩ@4.5V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLML6346TR 数据手册

IRLML6346

N-Channel MOSFET

UMW

SOT–23

Features

VDS (V) = 30V

RDS(ON)

63m (VGS = 4.5V)

80m (VGS = 2.5V)

Application(s)

Load/ System Switch

1. GATE

Benefits

2. SOURCE

3. DRAIN

Multi-vendor compatibility

Environmentally friendly

Increased Reliability

Absolute Maximum Ratings

Symbol

Parameter

Units

V_DS

Drain-Source Voltage

3.4

2.7

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

1.3

0.8

0.01

± 12

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Symbol

Parameter

Junction-to-Ambient

Typ.

–––

Max.

100

Units

R_JA

°C/W

R_JA

–––

Junction-to-Ambient (t<10s)

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width  400μs; duty cycle  2%.

Surface mounted on 1 in square Cu board.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRLML6346TR相关器件

型号	品牌	获取价格	描述	数据表
IRLML6346TRPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRLML6346TRPBF	TYSEMI	获取价格	Industry-standard SOT-23 Package MSL1, Consumer Qualification Multi-vendor compatibility
IRLML6401	INFINEON	获取价格	HEXFET Power MOSFET
IRLML6401	HC	获取价格	SOT-23
IRLML6401	KEXIN	获取价格	P-Channel MOSFET
IRLML6401	HOTTECH	获取价格	SOT-23
IRLML6401 (KRLML6401)	KEXIN	获取价格	P-Channel MOSFET
IRLML6401(KRLML6401)	KEXIN	获取价格	P-Channel MOSFET
IRLML6401GPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRLML6401GTRPBF	INFINEON	获取价格	Ultra Low On-Resistance