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IRLML6346PBF PDF预览

IRLML6346PBF

更新时间: 2024-11-20 12:29:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 218K
描述
HEXFET Power MOSFET

IRLML6346PBF 数据手册

 浏览型号IRLML6346PBF的Datasheet PDF文件第2页浏览型号IRLML6346PBF的Datasheet PDF文件第3页浏览型号IRLML6346PBF的Datasheet PDF文件第4页浏览型号IRLML6346PBF的Datasheet PDF文件第5页浏览型号IRLML6346PBF的Datasheet PDF文件第6页浏览型号IRLML6346PBF的Datasheet PDF文件第7页 
PD - 97584A  
IRLML6346TRPbF  
HEXFET® Power MOSFET  
VDS  
30  
V
V
VGS Max  
± 12  
RDS(on) max  
(@VGS = 4.5V)  
63  
80  
m
TM  
RDS(on) max  
(@VGS = 2.5V)  
Micro3 (SOT-23)  
m
IRLML6346TRPbF  
Application(s)  
Load/ System Switch  
Features and Benefits  
Features  
Benefits  
Industry-standard SOT-23 Package  
results in Multi-vendor compatibility  
Environmentally friendly  
Increased Reliability  
RoHS compliant containing no lead, no bromide and no halogen  
MSL1, Consumer Qualification  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
3.4  
2.7  
A
17  
PD @TA = 25°C  
PD @TA = 70°C  
1.3  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
W
0.8  
0.01  
W/°C  
V
VGS  
± 12  
-55 to + 150  
Gate-to-Source Voltage  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
100  
Units  
RJA  
Junction-to-Ambient  
°C/W  
RJA  
–––  
99  
Junction-to-Ambient (t<10s)  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through „ are on page 10  
www.irf.com  
1
03/09/12  

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