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IRLML6302TR

更新时间： 2024-11-20 12:02:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	285K
描述
generation v technology

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中文翻译

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数据手册
替代型号

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IRLML6302TR 数据手册

PD - 94947B

IRLML6302PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l P-Channel MOSFET

l SOT-23 Footprint

V_DSS= -20V

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

R_DS(on)= 0.60Ω

l Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This

package, dubbed the Micro3, is ideal for applications

where printed circuit board space is at a premium. The

low profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards.

Micro3^TM

Absolute Maximum Ratings

Parameter

Max.

-0.78

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-0.62

-4.9

P_D@T_A= 25°C

Power Dissipation

540

mW/°C

Linear Derating Factor

4.3

V_GS

Gate-to-Source Voltage

± 12

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

-5.0

V/ns

°C

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Typ.

Max.

230

Units

°C/W

R_θJA

www.irf.com

08/27/07

12 3 4 5 6 7 8

中文翻译

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IRLML6302TR 替代型号

型号	品牌	替代类型	描述	数据表
IRLML6302TRPBF	INFINEON	类似代替	HEXFETÂ® Power MOSFET

与IRLML6302TR相关器件

型号	品牌	获取价格	描述	数据表
IRLML6302TRPBF	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRLML6344	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRLML6344	HOTTECH	获取价格	SOT-23
IRLML6344PBF	INFINEON	获取价格	Industry-standard SOT-23 Package
IRLML6344PBF_15	INFINEON	获取价格	Industry-standard SOT-23 Package
IRLML6344TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
IRLML6344TRPBF	TYSEMI	获取价格	HEXFET Power MOSFET Industry-standard SOT-23 Package Lower Conduction Losses
IRLML6344TRPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRLML6346	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRLML6346	HOTTECH	获取价格	SOT-23