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IRLML5103PBF-1_15 PDF预览

IRLML5103PBF-1_15

更新时间: 2024-10-31 01:20:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 275K
描述
Compatible with Existing Surface Mount Techniques

IRLML5103PBF-1_15 数据手册

 浏览型号IRLML5103PBF-1_15的Datasheet PDF文件第2页浏览型号IRLML5103PBF-1_15的Datasheet PDF文件第3页浏览型号IRLML5103PBF-1_15的Datasheet PDF文件第4页浏览型号IRLML5103PBF-1_15的Datasheet PDF文件第5页浏览型号IRLML5103PBF-1_15的Datasheet PDF文件第6页浏览型号IRLML5103PBF-1_15的Datasheet PDF文件第7页 
IRLML5103PbF-1  
HEXFET® Power MOSFET  
VDS  
RDS(on) max  
(@VGS = -10V)  
Qg (typical)  
ID  
-30  
0.60  
3.4  
V
Ω
G
S
1
2
nC  
A
3
D
-0.76  
(@TA = 25°C)  
Micro3™  
Features  
Benefits  
Industry-standard pinout SOT-23 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
IRLML5103TRPbF-1  
Form  
Quantity  
IRLML5103TRPbF-1  
Micro3 (SOT-23)  
Tape and Reel  
3000  
AbsoluteMaximumRatings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
-0.76  
-0.61  
A
-4.8  
PD @TA = 25°C  
Power Dissipation  
540  
mW  
mW/°C  
V
Linear Derating Factor  
4.3  
VGS  
Gate-to-Source Voltage  
± 20  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
-5.0  
V/ns  
°C  
-55 to + 150  
ThermalResistance  
Parameter  
Maximum Junction-to-Ambient „  
Typ.  
–––  
Max.  
230  
Units  
°C/W  
RθJA  
1
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback  
November 25, 2013  

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