Datasheet > IRLML5203

IRLML5203

更新时间： 2024-11-19 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
7页	159K
描述
N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLML5203 数据手册

SMD Type

MOSFET

Transistors

P-Channel MOSFET

IRLML5203 (KRLML5203)

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Ƶ Features

ƽ VDS (V) =-30V

ƽ RDS(ON) İ 98mಳ @ VGS = -10V,I

= -3.0A

= -2.6A

ƽ RDS(ON) İ 165mಳ @ VGS = -4.5V,I

ƽ Ultra Low On-Resistance

ƽ Low Gate Charge

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1. Gate

2. Source

3. Drain

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Drain-Source Voltage

Symbol

Rating

-30

Unit

VDS

Gate-Source Voltage

-3.0

-2.4

-24

=25ć

=70ć

Continuous Drain Current, VGS @ -10V

Pulsed Drain Current (Note 1)

Power Dissipation

1.25

0.8

=25ć

=70ć

Linear Derating Factor

mW/ć

ć/W

Thermal Resistance.Junction- to-Ambient (Note 2)

Junction Temperature

thJA

100

150

Junction Storage Temperature Range

Tstg

-55 to 150

Note 1. Repetitive rating; pulse width limited by max. junction temperature.

2. Surface mounted on FR-4 board, t İ 5sec.

www.kexin.com.cn

12 3 4 5 6 7

中文翻译

下载PDF

与IRLML5203相关器件

型号	品牌	获取价格	描述	数据表
IRLML5203GPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLML5203GTRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRLML5203PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRLML5203PBF	TYSEMI	获取价格	Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
IRLML5203TR	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Meta
IRLML5203TR	UMW	获取价格	漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-3A;栅极-源极阈
IRLML5203TRPBF	TYSEMI	获取价格	HEXFET Power MOSFET
IRLML5203TRPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRLML5203TRPBF-1	INFINEON	获取价格	Small Signal Field-Effect Transistor
IRLML6244	INFINEON	获取价格	HEXFETPower MOSFET