Datasheet > IRHQ567110SCV

IRHQ567110SCV

更新时间： 2024-11-07 14:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
13页	621K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IRHQ567110SCV 技术参数

生命周期：	Active	包装说明：	CHIP CARRIER, S-CQCC-N28
Reach Compliance Code：	compliant	风险等级：	5.69
Is Samacsys：	N	雪崩能效等级（Eas）：	70 mJ
配置：	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	最小漏源击穿电压：	100 V
最大漏极电流 (Abs) (ID)：	4.6 A	最大漏极电流 (ID)：	4.6 A
最大漏源导通电阻：	1.2 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-CQCC-N28	元件数量：	4
端子数量：	28	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	SQUARE
封装形式：	CHIP CARRIER	极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	12 W	最大脉冲漏极电流 (IDM)：	18.4 A
参考标准：	MIL-19500	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	QUAD
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
最大关闭时间（toff）：	122 ns	最大开启时间（吨）：	44 ns
Base Number Matches：	1

IRHQ567110SCV 数据手册

PD-94057E

IRHQ567110

100V, Combination 2N-2P CHANNEL

RAD-Hard™ HEXFET^®

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

TECHNOLOGY

Product Summary

Part Number

IRHQ567110

IRHQ563110

IRHQ567110

IRHQ563110

Radiation Level

100 kRads(Si)

300 kRads(Si)

100 kRads(Si)

300 kRads(Si)

RDS(on)

I_D

Channel

4.6A

-2.8A

0.27

0.29

0.96

0.98

LCC-28

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Surface Mount

 Light Weight

 ESD Rating: Class 1A per MIL-STD-750, Method 1020

Description

IR HiRel RAD-Hard™ HEXFET^®MOSFET Technology

provides high performance power MOSFETs for space

applications. This technology has over a decade of proven

performance and reliability in satellite applications. These

devices have been characterized for both Total Dose and

Single Event Effects (SEE). The combination of low RDS(on)

and low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor control.

These devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Absolute Maximum Ratings (Per Die)

Pre-Irradiation

Symbol

N-Channel

Parameter

P-Channel

Units

I_D1@ V_GS= ±12V, T_C= 25°C

Continuous Drain Current

4.6

-2.8

I_D2@ V_GS= ±12V, T_C= 100°C Continuous Drain Current

2.9

18.4

-1.8

-11.2

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

0.1

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

47

4.6

± 20

70

-2.8

1.2

Single Pulse Avalanche Energy 

Avalanche Current 

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt

Operating Junction and

1.2

6.1

-7.1

-55 to +150

T_STG

Storage Temperature Range

°C

Package Mounting Surface Temp.

Weight

300 ( for 5s)

0.89 (Typical)

For Footnotes, refer to the page 2 for N Channel and page 3 for P Channel

2019-01-15

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...13

中文翻译

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与IRHQ567110SCV相关器件

型号	品牌	获取价格	描述	数据表
IRHQ57110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL
IRHQ57110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Me
IRHQ57110SCS	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRHQ57110SCV	INFINEON	获取价格	100V Quad N-Channel MOSFET in a 28-pin LCC package - Screening Level TXV
IRHQ57214SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ57214SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Met
IRHQ57214SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Met
IRHQ57214SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Met
IRHQ58110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL
IRHQ58110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Me

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