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IRHQ57110SCV

更新时间： 2024-11-21 11:01:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 175K
描述
100V Quad N-Channel MOSFET in a 28-pin LCC package - Screening Level TXV

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中文翻译

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IRHQ57110SCV 数据手册

 浏览型号IRHQ57110SCV的Datasheet PDF文件第2页浏览型号IRHQ57110SCV的Datasheet PDF文件第3页浏览型号IRHQ57110SCV的Datasheet PDF文件第4页浏览型号IRHQ57110SCV的Datasheet PDF文件第5页浏览型号IRHQ57110SCV的Datasheet PDF文件第6页浏览型号IRHQ57110SCV的Datasheet PDF文件第7页 
                                                                         
ꢁ
PD-94211E  
IRHQ57110  
100V, Quad N-CHANNEL  
TECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (LCC-28)  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHQ57110  
IRHQ53110  
IRHQ54110  
100K Rads (Si)  
300K Rads (Si)  
500K Rads (Si)  
0.27Ω  
0.27Ω  
0.27Ω  
0.29Ω  
4.6A  
4.6A  
4.6A  
4.6A  
LCC-28  
IRHQ58110 1000K Rads (Si)  
Features:  
International Rectifier’s R5TM technology provides high  
performance power MOSFETs for space applications.  
These devices have been characterized for Single Event  
Effects (SEE) with useful performance up to an LET of  
80 (MeV/(mg/cm2)). The combination of low RDS(on) and  
low gate charge reduces the power losses in switching  
applications such as DC to DC converters and motor  
control. These devices retain all of the well established  
advantages of MOSFETs such as voltage control, fast  
switching, ease of paralleling and temperature stability  
of electrical parameters.  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
ESD Rating: Class 1A per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings (Per Die)  
Parameter  
Pre-Irradiation  
Units  
I
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
4.6  
D
GS  
GS  
C
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
2.9  
18.4  
12  
A
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
Linear Derating Factor  
0.1  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
47  
mJ  
A
AS  
I
4.6  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
1.2  
mJ  
V/ns  
AR  
dv/dt  
6.1  
T
-55 to 150  
J
T
Storage Temperature Range  
°C  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.89 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/0115  
12345678

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