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IRHQ63110

更新时间： 2024-11-07 03:36:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 192K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

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中文翻译

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IRHQ63110 数据手册

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PD - 91781B  
IRHQ6110  
100V, Combination 2N-2P-CHANNEL  
RAD-Hard™ HEXFET®  
RADIATION HARDENED  
POWER MOSFET  
MOSFET TECHNOLOGY  
SURFACE MOUNT (LCC-28)  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
CHANNEL  
IRHQ6110  
IRHQ63110  
IRHQ6110  
IRHQ63110  
100K Rads (Si)  
300K Rads (Si)  
100K Rads (Si)  
0.6Ω  
0.6Ω  
1.1Ω  
3.0A  
3.0A  
-2.3A  
-2.3A  
N
N
P
P
300K Rads (Si) 1.1Ω  
LCC-28  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
Technology provides high performance power MOSFETs  
for space applications. This technology has over a decade  
of proven performance and reliability in satellite applica-  
tions. These devices have been characterized for both  
Total Dose and Single Event Effects (SEE). The combina-  
tion of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC con-  
verters and motor control. These devices retain all of the  
well established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and tempera-  
ture stability of electrical parameters.  
Features:  
n
Single Event Effect (SEE) Hardened  
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Continuous Drain Current  
N-Channel  
3.0  
P-Channel  
-2.3  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
1.9  
-1.5  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
12  
-9.2  
DM  
@ T = 25°C  
P
D
12  
12  
W
W/°C  
V
C
0.1  
0.1  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current ➀  
±20  
±20  
GS  
E
85 ➀  
3.0  
75 ➀  
-2.3  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt  
Operating Junction  
1.2  
1.2  
mJ  
V/ns  
AR  
dv/dt  
3.0 ➀  
9.0 ➀  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.89 (Typical)  
For footnotes, refer to the last page  
www.irf.com  
1
03/24/04  
1234567...14

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