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IRHSLNA57Z60 PDF预览

IRHSLNA57Z60

更新时间: 2024-11-05 05:39:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 125K
描述
RAD-HARD IRHSLNA57Z60 RECTIFIER SURFACE MOUNT (SMD-2)

IRHSLNA57Z60 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMD-2, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.34
Is Samacsys:N雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.004 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHSLNA57Z60 数据手册

 浏览型号IRHSLNA57Z60的Datasheet PDF文件第2页浏览型号IRHSLNA57Z60的Datasheet PDF文件第3页浏览型号IRHSLNA57Z60的Datasheet PDF文件第4页浏览型号IRHSLNA57Z60的Datasheet PDF文件第5页浏览型号IRHSLNA57Z60的Datasheet PDF文件第6页浏览型号IRHSLNA57Z60的Datasheet PDF文件第7页 
PD-94400B  
RAD-HARD  
SYNCHRONOUS RECTIFIER  
SURFACE MOUNT (SMD-2)  
IRHSLNA57Z60  
30V, N-CHANNEL  
Product Summary  
Part Number Radiation Level RDS(on)  
QG  
IRHSLNA57Z60 100K Rads (Si) 4.0m200nC  
IRHSLNA53Z60 300K Rads (Si) 4.0m200nC  
IRHSLNA54Z60 600K Rads (Si) 4.0m200nC  
IRHSLNA58Z60 1000K Rads (Si) 4.5m200nC  
SMD-2  
Description:  
The SynchFet family of Co-Pack RAD-Hard MOSFETs  
and Schottky diodes offers the designer an innovative,  
board space saving solution for switching regulator and  
power management applications.RAD-Hard MOSFETs  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area.Combining  
this technology with International Rectifier’s low forward  
drop Schottky rectifiers results in an extremely efficient  
device suitable for use in a wide variety of Military and  
Space applications.  
Features:  
n
Co-Pack N-channel RAD-Hard MOSFET  
and Schottky Diode  
n
Ideal for Synchronous Rectifiers in DC-DC  
Converters up to 75A Output  
Low Conduction Losses  
Low Switching Losses  
Low Vf Schottky Rectifier  
n
n
n
n
Refer to IRHSNA57Z60 for Lower Rds(on)  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain or Source Current  
75*  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain or Source Current  
75*  
300  
D
GS  
C
I
Pulsed Drain Current ➀  
DM  
@ T = 25°C  
P
Max. Power Dissipation  
250  
W
W/°C  
V
D
C
Linear Derating Factor  
2.0  
V
GS  
Gate-to-Source Voltage  
±20  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
75  
AR  
E
Repetitive Avalanche Energy ➀  
Schottky and Body Diode Avg. Forward Current ➀  
Schottky and Body Diode Avg. Forward Current ➀  
Opeating and Storage Temperature Range  
25  
mJ  
AR  
(AV)@ T = 25°C  
I
F
75*  
C
A
I
(AV)@ T =100°C  
75*  
F
C
T
T
-55 to 150  
J, STG  
°C  
g
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
3.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
03/30/04  

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