PD-94237F
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSNA57Z60
30V, N-CHANNEL
Product Summary
Part Number Radiation Level RDS(on)
QG
IRHSNA57Z60 100K Rads (Si) 3.5mΩ 200nC
IRHSNA53Z60 300K Rads (Si) 3.5mΩ 200nC
IRHSNA54Z60 600K Rads (Si) 3.5mΩ 200nC
IRHSNA58Z60 1000K Rads (Si) 4.0mΩ 200nC
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications.RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area.Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n
Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
n
n
n
n
Refer to IRHSLNA57Z60 for Lower Inductance
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain or Source Current
75*
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain or Source Current
75*
300
D
GS
C
I
Pulsed Drain Current ➀
DM
@ T = 25°C
P
Max. Power Dissipation
250
W
W/°C
V
D
C
Linear Derating Factor
2.0
V
GS
Gate-to-Source Voltage
±20
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
75
AR
E
Repetitive Avalanche Energy ➀
Schottky and Body Diode Avg. Forward Current ➀
Schottky and Body Diode Avg. Forward Current ➀
Opeating and Storage Temperature Range
25
mJ
AR
(AV)@ T = 25°C
I
F
75*
C
A
I
(AV)@ T =100°C
75*
F
C
T
T
-55 to 150
J, STG
°C
g
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
09/06/02