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IRHSNA57Z60SCS PDF预览

IRHSNA57Z60SCS

更新时间: 2023-12-06 20:12:24
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 113K
描述
Rad hard, 30V, 75A, single, N-channel MOSFET, in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL

IRHSNA57Z60SCS 数据手册

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PD-94237F  
RAD-HARD  
SYNCHRONOUS RECTIFIER  
SURFACE MOUNT (SMD-2)  
IRHSNA57Z60  
30V, N-CHANNEL  
Product Summary  
Part Number Radiation Level RDS(on)  
QG  
IRHSNA57Z60 100K Rads (Si) 3.5m200nC  
IRHSNA53Z60 300K Rads (Si) 3.5m200nC  
IRHSNA54Z60 600K Rads (Si) 3.5m200nC  
IRHSNA58Z60 1000K Rads (Si) 4.0m200nC  
SMD-2  
Description:  
The SynchFet family of Co-Pack RAD-Hard MOSFETs  
and Schottky diodes offers the designer an innovative,  
board space saving solution for switching regulator and  
power management applications.RAD-Hard MOSFETs  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area.Combining  
this technology with International Rectifier’s low forward  
drop Schottky rectifiers results in an extremely efficient  
device suitable for use in a wide variety of Military and  
Space applications.  
Features:  
n
Co-Pack N-channel RAD-Hard MOSFET  
and Schottky Diode  
n
Ideal for Synchronous Rectifiers in DC-DC  
Converters up to 75A Output  
Low Conduction Losses  
Low Switching Losses  
Low Vf Schottky Rectifier  
n
n
n
n
Refer to IRHSLNA57Z60 for Lower Inductance  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain or Source Current  
75*  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain or Source Current  
75*  
300  
D
GS  
C
I
Pulsed Drain Current ➀  
DM  
@ T = 25°C  
P
Max. Power Dissipation  
250  
W
W/°C  
V
D
C
Linear Derating Factor  
2.0  
V
GS  
Gate-to-Source Voltage  
±20  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
75  
AR  
E
Repetitive Avalanche Energy ➀  
Schottky and Body Diode Avg. Forward Current ➀  
Schottky and Body Diode Avg. Forward Current ➀  
Opeating and Storage Temperature Range  
25  
mJ  
AR  
(AV)@ T = 25°C  
I
F
75*  
C
A
I
(AV)@ T =100°C  
75*  
F
C
T
T
-55 to 150  
J, STG  
°C  
g
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
3.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
09/06/02  

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