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IRHY53Z30CM PDF预览

IRHY53Z30CM

更新时间： 2024-11-20 03:00:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 133K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

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中文翻译

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IRHY53Z30CM 数据手册

 浏览型号IRHY53Z30CM的Datasheet PDF文件第2页浏览型号IRHY53Z30CM的Datasheet PDF文件第3页浏览型号IRHY53Z30CM的Datasheet PDF文件第4页浏览型号IRHY53Z30CM的Datasheet PDF文件第5页浏览型号IRHY53Z30CM的Datasheet PDF文件第6页浏览型号IRHY53Z30CM的Datasheet PDF文件第7页 
                                                                             
ꢁ
PD-93824E  
IRHY57Z30CM  
JANSR2N7482T3  
30V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
REF: MIL-PRF-19500/702  
TECHNOLOGY  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
IRHY57Z30CM 100K Rads (Si) 0.03Ω  
IRHY53Z30CM 300K Rads (Si) 0.03Ω  
IRHY54Z30CM 500K Rads (Si) 0.03Ω  
ID  
QPL Part Number  
18A* JANSR2N7482T3  
18A* JANSF2N7482T3  
18A* JANSG2N7482T3  
IRHF58Z30CM 1000K Rads (Si) 0.035Ω 18A* JANSH2N7482T3  
TO-257AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
Features:  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
n Single Event Effect (SEE) Hardened  
n Ultra Low RDS(on)  
n Low Total Gate Charge  
n Simple Drive Requirements  
n Ease of Paralleling  
n Hermetically Sealed  
n Ceramic Package  
n Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
18*  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
18*  
72  
D
GS  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
177  
18  
GS  
E
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
1.7  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10 sec)  
4.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/25/06  
12345678

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