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IRHSLNA57064D

更新时间： 2024-11-21 11:01:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 2395K
描述
60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package - On DBC Carrier

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IRHSLNA57064D 数据手册

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PD-94401C  
IRHSLNA57064  
60V, N-CHANNEL  
RADIATION HARDENED  
SYNCHRONOUS RECTIFIER  
SURFACE MOUNT (SMD-2)  
Product Summary  
Part Number  
Radiation Level RDS(on)  
QG  
IRHSLNA57064 100 kRads(Si)  
IRHSLNA53064 300 kRads(Si)  
IRHSLNA54064 600 kRads(Si)  
IRHSLNA58064 1000 kRads(Si)  
160nC  
160nC  
160nC  
160nC  
6.1m  
6.1m  
6.1m  
6.1m  
Description  
Features  
Co-Pack N-channel RAD-Hard MOSFET and  
Schottky Diode  
The SynchFet family of Co-Pack RAD-Hard MOSFETs  
and Schottky diodes offers the designer an innovative,  
board space saving solution for switching regulator and  
power management applications. RAD-Hard MOSFETs  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. Combining  
this technology with IR Hirel low forward drop Schottky  
rectifiers results in an extremely efficient device suitable  
for use in a wide variety of Military and Space  
applications.  
Ideal for Synchronous Rectifiers in DC-DC  
Converters up to 75A Output  
Low Conduction Losses  
Low Switching Losses  
Low Vf Schottky Rectifier  
ESD Rating: Class 3B per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Continuous Drain or Source Current  
Continuous Drain or Source Current  
Pulsed Drain Current  
Units  
ID1 @ VGS = 12V, TC = 25°C  
ID2 @ VGS = 12V, TC = 100°C  
IDM @TC = 25°C  
75*  
A
75*  
300  
250  
2.0  
± 20  
370  
75  
PD @TC = 25°C  
Maximum Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
Gate-to-Source Voltage  
EAS  
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
A
IAR  
EAR  
IF (AV) @ TC = 25°C  
IF (AV) @ TC = 100°C  
TJ  
Repetitive Avalanche Energy   
Schottky and Body Diode Avg. Forward Current   
Schottky and Body Diode Avg. Forward Current   
Operating Junction and  
25  
mJ  
75*  
75*  
A
-55 to + 150  
TSTG  
Storage Temperature Range  
Package Mounting Surface Temp.  
Weight  
°C  
g
300 (for 5s)  
3.3 (Typical)  
* Current is limited by package  
For Footnotes, refer to the page 2.  
1
2019-04-29  
1234567...9

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