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IRHQ93110 PDF预览

IRHQ93110

更新时间: 2024-11-20 20:20:11
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
8页 199K
描述
Power Field-Effect Transistor, 2.3A I(D), 100V, 1.1ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28

IRHQ93110 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, CERAMIC, LCC-28Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
雪崩能效等级(Eas):75 mJ配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):2.3 A
最大漏极电流 (ID):2.3 A最大漏源导通电阻:1.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-CQCC-N28
JESD-609代码:e0元件数量:4
端子数量:28工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:SQUARE封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):12 W最大脉冲漏极电流 (IDM):9.2 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHQ93110 数据手册

 浏览型号IRHQ93110的Datasheet PDF文件第2页浏览型号IRHQ93110的Datasheet PDF文件第3页浏览型号IRHQ93110的Datasheet PDF文件第4页浏览型号IRHQ93110的Datasheet PDF文件第5页浏览型号IRHQ93110的Datasheet PDF文件第6页浏览型号IRHQ93110的Datasheet PDF文件第7页 
PD-93794D  
IRHQ9110  
100V, QUAD P-CHANNEL  
RAD-HardHEXFET®  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (LCC-28)  
MOSFET TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHQ9110  
100K Rads (Si)  
1.1Ω  
1.1Ω  
-2.3A  
-2.3A  
IRHQ93110 300K Rads (Si)  
LCC-28  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
technology provides high performance power MOSFETs  
for space applications. This technology has over a  
decade of proven performance and reliability in satellite  
applications. These devices have been characterized  
for both Total Dose and Single Event Effects (SEE). The  
combination of low RDS(on) and low gate charge reduces  
the power losses in switching applications such as DC to  
DC converters and motor control. These devices retain  
all of the well established advantages of MOSFETs such  
as voltage control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
n
n
n
n
n
n
n
n
n
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings (Per Die)  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
-2.3  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
-1.5  
-9.2  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
12  
W
W/°C  
V
D
C
Linear Derating Factor  
0.1  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
75  
mJ  
A
AS  
I
-2.3  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt Â  
Operating Junction  
1.2  
mJ  
V/ns  
AR  
dv/dt  
9.0  
T
-55 to 150  
J
T
Storage Temperature Range  
°C  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.89 (Typical)  
For footnotes, refer to the last page  
www.irf.com  
1
07/20/11  

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