是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED, CERAMIC, LCC-28 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.21 |
雪崩能效等级(Eas): | 75 mJ | 配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 2.3 A |
最大漏极电流 (ID): | 2.3 A | 最大漏源导通电阻: | 1.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-CQCC-N28 |
JESD-609代码: | e0 | 元件数量: | 4 |
端子数量: | 28 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 12 W | 最大脉冲漏极电流 (IDM): | 9.2 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHQ93110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 100V, 1.1ohm, 4-Element, P-Channel, Silicon, Met | |
IRHSLNA53064 | INFINEON |
获取价格 |
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) | |
IRHSLNA53064SCS | INFINEON |
获取价格 |
60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package - Screening Level Spa | |
IRHSLNA53Z60 | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Met | |
IRHSLNA54064 | INFINEON |
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RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) | |
IRHSLNA54Z60 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT | |
IRHSLNA57064 | INFINEON |
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RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) | |
IRHSLNA57064A | INFINEON |
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Power Field-Effect Transistor, | |
IRHSLNA57064D | INFINEON |
获取价格 |
60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package - On DBC Carrier | |
IRHSLNA57064SCS | INFINEON |
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Power Field-Effect Transistor, |