Datasheet > IRHSLNA57064SCSD

IRHSLNA57064SCSD

更新时间： 2024-02-03 11:05:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	2395K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IRHSLNA57064SCSD 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

IRHSLNA57064SCSD 数据手册

PD-94401C

IRHSLNA57064

60V, N-CHANNEL

RADIATION HARDENED

SYNCHRONOUS RECTIFIER

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

Radiation Level RDS(on)

Q_G

IRHSLNA57064 100 kRads(Si)

IRHSLNA53064 300 kRads(Si)

IRHSLNA54064 600 kRads(Si)

IRHSLNA58064 1000 kRads(Si)

160nC

6.1m

SMD-2

Description

Features

 Co-Pack N-channel RAD-Hard MOSFET and

Schottky Diode

The SynchFet family of Co-Pack RAD-Hard MOSFETs

and Schottky diodes offers the designer an innovative,

board space saving solution for switching regulator and

power management applications. RAD-Hard MOSFETs

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. Combining

this technology with IR Hirel low forward drop Schottky

rectifiers results in an extremely efficient device suitable

for use in a wide variety of Military and Space

applications.

 Ideal for Synchronous Rectifiers in DC-DC

Converters up to 75A Output

 Low Conduction Losses

 Low Switching Losses

 Low Vf Schottky Rectifier

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Continuous Drain or Source Current

Pulsed Drain Current 

Units

I_D1@ V_GS= 12V, T_C= 25°C

I_D2@ V_GS= 12V, T_C= 100°C

I_DM@T_C= 25°C

75*

300

250

2.0

± 20

370

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy 

Avalanche Current 

I_AR

E_AR

I_F(AV) @ T_C= 25°C

I_F(AV) @ T_C= 100°C

T_J

Repetitive Avalanche Energy 

Schottky and Body Diode Avg. Forward Current 

Operating Junction and

75*

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temp.

Weight

°C

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

2019-04-29

12 3 4 5 6 7...9

中文翻译

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与IRHSLNA57064SCSD相关器件

型号	品牌	获取价格	描述	数据表
IRHSLNA57064SCV	INFINEON	获取价格	Power Field-Effect Transistor,
IRHSLNA57Z60	INFINEON	获取价格	RAD-HARD IRHSLNA57Z60 RECTIFIER SURFACE MOUNT (SMD-2)
IRHSLNA58064	INFINEON	获取价格	RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
IRHSLNA58Z60	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
IRHSNA53064	INFINEON	获取价格	RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2)
IRHSNA53064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me
IRHSNA53Z60	INFINEON	获取价格	RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 30V N-CHANNEL
IRHSNA54064	INFINEON	获取价格	RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2)
IRHSNA54064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me
IRHSNA54Z60	INFINEON	获取价格	RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 30V N-CHANNEL

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