生命周期: | Active | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
Reach Compliance Code: | compliant | 风险等级: | 5.71 |
其他特性: | RADIATION HARDENED | 雪崩能效等级(Eas): | 370 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 75 A |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.0061 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
最大脉冲漏极电流 (IDM): | 300 A | 参考标准: | MIL-19500 |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 125 ns |
最大开启时间(吨): | 160 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHSLNA57Z60 | INFINEON |
获取价格 |
RAD-HARD IRHSLNA57Z60 RECTIFIER SURFACE MOUNT (SMD-2) |
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IRHSLNA58064 | INFINEON |
获取价格 |
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) |
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IRHSLNA58Z60 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Met |
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IRHSNA53064 | INFINEON |
获取价格 |
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
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IRHSNA53064PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me |
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IRHSNA53Z60 | INFINEON |
获取价格 |
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 30V N-CHANNEL |
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IRHSNA54064 | INFINEON |
获取价格 |
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
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IRHSNA54064PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me |
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IRHSNA54Z60 | INFINEON |
获取价格 |
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 30V N-CHANNEL |
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IRHSNA57064 | INFINEON |
获取价格 |
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
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