Datasheet > IRHQ9110SCS

IRHQ9110SCS

更新时间： 2024-11-06 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	199K
描述
100V Quad P-Channel MOSFET in a 28-pin LCC package - Standard Packaging

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IRHQ9110SCS 数据手册

PD-93794D

IRHQ9110

100V, QUAD P-CHANNEL

RAD-Hard^™HEXFET^®

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

MOSFET TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHQ9110

100K Rads (Si)

1.1Ω

-2.3A

IRHQ93110 300K Rads (Si)

LCC-28

International Rectifier’s RAD-Hard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a

decade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Pre-Irradiation

Absolute Maximum Ratings (Per Die)

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

-2.3

= 12V, T = 100°C Continuous Drain Current

-1.5

-9.2

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.1

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

-2.3

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

1.2

V/ns

dv/dt

9.0

-55 to 150

Storage Temperature Range

°C

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

0.89 (Typical)

For footnotes, refer to the last page

www.irf.com

07/20/11

12 3 4 5 6 7 8

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与IRHQ9110SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHQ93110	INFINEON	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 1.1ohm, 4-Element, P-Channel, Silicon, Met
IRHQ93110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 1.1ohm, 4-Element, P-Channel, Silicon, Met
IRHSLNA53064	INFINEON	获取价格	RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
IRHSLNA53064SCS	INFINEON	获取价格	60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package - Screening Level Spa
IRHSLNA53Z60	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
IRHSLNA54064	INFINEON	获取价格	RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
IRHSLNA54Z60	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 75A I(D) \| SMT
IRHSLNA57064	INFINEON	获取价格	RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
IRHSLNA57064A	INFINEON	获取价格	Power Field-Effect Transistor,
IRHSLNA57064D	INFINEON	获取价格	60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package - On DBC Carrier

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