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IRHQ7214PBF PDF预览

IRHQ7214PBF

更新时间: 2024-11-20 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 128K
描述
Power Field-Effect Transistor, 1.6A I(D), 250V, 2.25ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28

IRHQ7214PBF 数据手册

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PD - 93828A  
IRHQ7214  
250V, QUAD N-CHANNEL  
RAD-HardHEXFET®  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (LCC-28)  
MOSFET TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHQ7214  
IRHQ3214  
IRHQ4214  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
2.25Ω  
2.25Ω  
2.25Ω  
1.6A  
1.6A  
1.6A  
1.6A  
IRHQ8214 1000K Rads (Si) 2.25Ω  
LCC-28  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
technology provides high performance power MOSFETs  
for space applications. This technology has over a de-  
cade of proven performance and reliability in satellite ap-  
plications. These devices have been characterized for  
bothTotal Dose and Single Event Effects (SEE). The com-  
bination of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC to DC  
converters and motor control. These devices retain all of  
the well established advantages of MOSFETs such as  
voltage control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
Single Event Effect (SEE) Hardened  
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings ( Per Die)  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
1.6  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
1.0  
6.4  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
12  
W
W/°C  
V
D
C
Linear Derating Factor  
0.1  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
62  
mJ  
A
AS  
I
1.6  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
1.2  
mJ  
V/ns  
AR  
dv/dt  
3.5  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.89 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
04/22/03  

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