是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, R-CQCC-N28 | 针数: | 28 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.82 | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 62 mJ | 配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (ID): | 1.6 A |
最大漏源导通电阻: | 2.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CQCC-N28 | 元件数量: | 4 |
端子数量: | 28 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 6.4 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHQ8110 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
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IRHQ8110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 100V, 0.75ohm, 4-Element, N-Channel, Silicon, Meta |
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IRHQ8214 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
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IRHQ9110 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
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IRHQ9110SCS | INFINEON |
获取价格 |
100V Quad P-Channel MOSFET in a 28-pin LCC package - Standard Packaging |
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IRHQ93110 | INFINEON |
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Power Field-Effect Transistor, 2.3A I(D), 100V, 1.1ohm, 4-Element, P-Channel, Silicon, Met |
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IRHQ93110PBF | INFINEON |
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Power Field-Effect Transistor, 2.3A I(D), 100V, 1.1ohm, 4-Element, P-Channel, Silicon, Met |
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IRHSLNA53064 | INFINEON |
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RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) |
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IRHSLNA53064SCS | INFINEON |
获取价格 |
60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package - Screening Level Spa |
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IRHSLNA53Z60 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Met |
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