是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, S-CQCC-N28 | Reach Compliance Code: | compliant |
风险等级: | 5.67 | 雪崩能效等级(Eas): | 85 mJ |
配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 0.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-CQCC-N28 |
元件数量: | 4 | 端子数量: | 28 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 12 A |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHQ7110SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal | |
IRHQ7214 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) | |
IRHQ7214PBF | INFINEON |
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Power Field-Effect Transistor, 1.6A I(D), 250V, 2.25ohm, 4-Element, N-Channel, Silicon, Me | |
IRHQ8110 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) | |
IRHQ8110PBF | INFINEON |
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Power Field-Effect Transistor, 3A I(D), 100V, 0.75ohm, 4-Element, N-Channel, Silicon, Meta | |
IRHQ8214 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) | |
IRHQ9110 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) | |
IRHQ9110SCS | INFINEON |
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100V Quad P-Channel MOSFET in a 28-pin LCC package - Standard Packaging | |
IRHQ93110 | INFINEON |
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Power Field-Effect Transistor, 2.3A I(D), 100V, 1.1ohm, 4-Element, P-Channel, Silicon, Met | |
IRHQ93110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 100V, 1.1ohm, 4-Element, P-Channel, Silicon, Met |