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IRHQ7110PBF PDF预览

IRHQ7110PBF

更新时间: 2024-11-20 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 129K
描述
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IRHQ7110PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CHIP CARRIER, S-CQCC-N28Reach Compliance Code:compliant
风险等级:5.67雪崩能效等级(Eas):85 mJ
配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):3 A最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-CQCC-N28
元件数量:4端子数量:28
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):12 A
表面贴装:YES端子形式:NO LEAD
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRHQ7110PBF 数据手册

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PD - 93785A  
IRHQ7110  
100V, QUAD N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (LCC-28)  
RAD-HardHEXFET®  
MOSFETTECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHQ7110  
IRHQ3110  
IRHQ4110  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
0.6Ω  
0.6Ω  
0.6Ω  
0.75Ω  
3.0A  
3.0A  
3.0A  
3.0A  
IRHQ8110 1000K Rads (Si)  
LCC-28  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
technology provides high performance power MOSFETs  
for space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been characterized  
for both Total Dose and Single Event Effects (SEE). The  
combination of low RDS(on) and low gate charge reduces  
the power losses in switching applications such as DC  
to DC converters and motor control. These devices re-  
tain all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of parallel-  
ing and temperature stability of electrical parameters.  
Features:  
n
Single Event Effect (SEE) Hardened  
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings (Per Die)  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
3.0  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
1.9  
12  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
12  
W
W/°C  
V
D
C
Linear Derating Factor  
0.1  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
85  
mJ  
A
AS  
I
3.0  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
1.2  
mJ  
V/ns  
AR  
dv/dt  
3.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.89 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
12/27/00  

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