Datasheet > IRHQ6110SCS

IRHQ6110SCS

更新时间： 2024-11-08 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1309K
描述
100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package - Standard Packaging

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IRHQ6110SCS 数据手册

PD-91781D

IRHQ6110

100V, Combination 2N-2P CHANNEL

RAD-Hard™ HEXFET^®

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

Product Summary

Part Number

IRHQ6110

IRHQ63110

IRHQ6110

IRHQ63110

Radiation Level

100 kRads(Si)

300 kRads(Si)

100 kRads(Si)

300 kRads(Si)

RDS(on)

I_D

Channel

3.0A

-2.3A

0.6

1.1

1.2

LCC-28

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Proton Tolerant

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Surface Mount

Description

IR HiRel RAD-Hard™ HEXFET^®MOSFET Technology

provides high performance power MOSFETs for space

applications. This technology has over a decade of proven

performance and reliability in satellite applications. These

devices have been characterized for both Total Dose and

Single Event Effects (SEE). The combination of low RDS(on)

and low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor control.

These devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

 Light Weight

Absolute Maximum Ratings (Per Die)

Pre-Irradiation

Symbol

N-Channel

Parameter

P-Channel

Units

I_D1@ V_GS= ±12V, T_C= 25°C

Continuous Drain Current

3.0

-2.3

I_D2@ V_GS= ±12V, T_C= 100°C Continuous Drain Current

1.9

-1.5

-9.2

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

0.1

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

85

3.0

± 20

75

-2.3

1.2

Single Pulse Avalanche Energy 

Avalanche Current 

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt

Operating Junction and

1.2

V/ns

3.0

-9.0

-55 to +150

T_STG

Storage Temperature Range

°C

Package Mounting Surface Temp.

Weight

300 ( for 5s)

0.89 (Typical)

For Footnotes, refer to the page 2 for N Channel and page 3 for P Channel

2020-12-04

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...13

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与IRHQ6110SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHQ63110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ7110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ7110PBF	INFINEON	获取价格	暂无描述
IRHQ7110SCS	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal
IRHQ7214	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ7214PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.6A I(D), 250V, 2.25ohm, 4-Element, N-Channel, Silicon, Me
IRHQ8110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ8110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 100V, 0.75ohm, 4-Element, N-Channel, Silicon, Meta
IRHQ8214	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ9110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

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