Datasheet > IRHQ57110SCS

IRHQ57110SCS

更新时间： 2024-11-07 14:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	175K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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技术参数
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IRHQ57110SCS 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.37	最大漏极电流 (Abs) (ID)：	4.6 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	12 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

IRHQ57110SCS 数据手册

ꢁ

PD-94211E

IRHQ57110

100V, Quad N-CHANNEL

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

Product Summary

Part Number Radiation Level RDS(on)

IRHQ57110

IRHQ53110

IRHQ54110

100K Rads (Si)

300K Rads (Si)

500K Rads (Si)

0.27Ω

0.29Ω

4.6A

LCC-28

IRHQ58110 1000K Rads (Si)

Features:

International Rectifier’s R5^TMtechnology provides high

performance power MOSFETs for space applications.

These devices have been characterized for Single Event

Effects (SEE) with useful performance up to an LET of

80 (MeV/(mg/cm²)). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor

control. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability

of electrical parameters.

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

ESD Rating: Class 1A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings (Per Die)

Parameter

Pre-Irradiation

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

4.6

@ V

= 12V, T = 100°C Continuous Drain Current

2.9

18.4

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.1

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

4.6

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

1.2

V/ns

dv/dt

6.1

-55 to 150

Storage Temperature Range

°C

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

0.89 (Typical)

For footnotes refer to the last page

www.irf.com

05/0115

12 3 4 5 6 7 8

中文翻译

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与IRHQ57110SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHQ57110SCV	INFINEON	获取价格	100V Quad N-Channel MOSFET in a 28-pin LCC package - Screening Level TXV
IRHQ57214SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ57214SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Met
IRHQ57214SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Met
IRHQ57214SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Met
IRHQ58110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL
IRHQ58110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Me
IRHQ593110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 100V, Quad P-CHANNEL
IRHQ597110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 100V, Quad P-CHANNEL
IRHQ597110SCS	INFINEON	获取价格	100V Quad P-Channel MOSFET in a 28-pin LCC package - Standard Packaging

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