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IRHQ57214SEPBF

更新时间： 2024-11-20 13:01:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 178K
描述
Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-28

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IRHQ57214SEPBF 数据手册

 浏览型号IRHQ57214SEPBF的Datasheet PDF文件第2页浏览型号IRHQ57214SEPBF的Datasheet PDF文件第3页浏览型号IRHQ57214SEPBF的Datasheet PDF文件第4页浏览型号IRHQ57214SEPBF的Datasheet PDF文件第5页浏览型号IRHQ57214SEPBF的Datasheet PDF文件第6页浏览型号IRHQ57214SEPBF的Datasheet PDF文件第7页 
                                                                         
ꢁ
PD-93881C  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (LCC-28)  
IRHQ57214SE  
250V, QUAD N-CHANNEL  
TECHNOLOGY  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
IRHQ57214SE 100K Rads (Si) 1.5Ω  
ID  
1.9A  
LCC-28  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects(SEE) with useful  
performance up to an LET of 80 (MeV/(mg/cm2)). The  
combination of low RDS(on) and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control.  
These devices retain all of the well established  
advantages of MOSFETs such as voltage control, fast  
switching, ease of paralleling and temperature  
stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
ProtonTolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
n Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings (Per Die)  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
1.9  
1.2  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
7.6  
DM  
@ T = 25°C  
P
D
12  
W
W/°C  
V
C
0.1  
V
Gate-to-Source Voltage  
Single PulseAvalanche Energy Á  
Avalanche Current À  
±20  
30  
GS  
E
AS  
mJ  
A
I
1.9  
AR  
E
RepetitiveAvalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
1.2  
mJ  
V/ns  
AR  
dv/dt  
9.9  
T
-55 to 150  
J
oC  
g
T
STG  
Storage Temperature Range  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.89 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/19/05  
12345678

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