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IRHQ597110 PDF预览

IRHQ597110

更新时间: 2024-11-05 03:36:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 181K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 100V, Quad P-CHANNEL

IRHQ597110 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.47雪崩能效等级(Eas):70 mJ
配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):2.8 A最大漏极电流 (ID):2.8 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-CQCC-N28JESD-609代码:e0
元件数量:4端子数量:28
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):12 W
最大脉冲漏极电流 (IDM):11.2 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

IRHQ597110 数据手册

 浏览型号IRHQ597110的Datasheet PDF文件第2页浏览型号IRHQ597110的Datasheet PDF文件第3页浏览型号IRHQ597110的Datasheet PDF文件第4页浏览型号IRHQ597110的Datasheet PDF文件第5页浏览型号IRHQ597110的Datasheet PDF文件第6页浏览型号IRHQ597110的Datasheet PDF文件第7页 
                                                                          
PD-94210A  
IRHQ597110  
100V, Quad P-CHANNEL  
RAD-HardHEXFET®  
TECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (LCC-28)  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHQ597110 100K Rads (Si)  
IRHQ593110 300K Rads (Si)  
0.96-2.8A  
0.98-2.8A  
LCC-28  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
Technology provides high performance power MOSFETs  
for space applications. This technology has over a decade  
of proven performance and reliability in satellite  
applications. These devices have been characterized for  
both Total Dose and Single Event Effects (SEE). The  
combination of low RDS(on) and low gate charge reduces  
the power losses in switching applications such as DC to  
DC converters and motor control. These devices retain all  
of the well established advantages of MOSFETs such as  
voltage control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
n
n
n
n
n
n
n
n
n
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings (Per Die)  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-2.8  
D
GS  
GS  
C
A
I
D
= -12V, T = 100°C Continuous Drain Current  
-1.8  
-11.2  
12  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
Linear Derating Factor  
0.1  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
70  
mJ  
A
AS  
I
-2.8  
AR  
E
Repetitive Avalanche Energy À  
1.2  
mJ  
V/ns  
AR  
dv/dt  
Peak Diode Recovery dv/dt  
Operating Junction  
Â
-7.1  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.89 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/18/05  

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