Datasheet > IRHQ563110SCS

IRHQ563110SCS

更新时间： 2024-01-06 22:54:04

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	621K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IRHQ563110SCS 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Base Number Matches：	1

IRHQ563110SCS 数据手册

PD-94057E

IRHQ567110

100V, Combination 2N-2P CHANNEL

RAD-Hard™ HEXFET^®

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

TECHNOLOGY

Product Summary

Part Number

IRHQ567110

IRHQ563110

IRHQ567110

IRHQ563110

Radiation Level

100 kRads(Si)

300 kRads(Si)

100 kRads(Si)

300 kRads(Si)

RDS(on)

I_D

Channel

4.6A

-2.8A

0.27

0.29

0.96

0.98

LCC-28

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Surface Mount

 Light Weight

 ESD Rating: Class 1A per MIL-STD-750, Method 1020

Description

IR HiRel RAD-Hard™ HEXFET^®MOSFET Technology

provides high performance power MOSFETs for space

applications. This technology has over a decade of proven

performance and reliability in satellite applications. These

devices have been characterized for both Total Dose and

Single Event Effects (SEE). The combination of low RDS(on)

and low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor control.

These devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Absolute Maximum Ratings (Per Die)

Pre-Irradiation

Symbol

N-Channel

Parameter

P-Channel

Units

I_D1@ V_GS= ±12V, T_C= 25°C

Continuous Drain Current

4.6

-2.8

I_D2@ V_GS= ±12V, T_C= 100°C Continuous Drain Current

2.9

18.4

-1.8

-11.2

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

0.1

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

47

4.6

± 20

70

-2.8

1.2

Single Pulse Avalanche Energy 

Avalanche Current 

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt

Operating Junction and

1.2

6.1

-7.1

-55 to +150

T_STG

Storage Temperature Range

°C

Package Mounting Surface Temp.

Weight

300 ( for 5s)

0.89 (Typical)

For Footnotes, refer to the page 2 for N Channel and page 3 for P Channel

2019-01-15

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...13

中文翻译

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与IRHQ563110SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHQ567110	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ567110N	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ567110P	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ567110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel and P-Channe
IRHQ567110SCS	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel and P-Channe
IRHQ567110SCV	INFINEON	获取价格	Power Field-Effect Transistor,
IRHQ57110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL
IRHQ57110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Me
IRHQ57110SCS	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRHQ57110SCV	INFINEON	获取价格	100V Quad N-Channel MOSFET in a 28-pin LCC package - Screening Level TXV

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