Datasheet > IRHQ563110P

IRHQ563110P

更新时间： 2024-11-20 03:36:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	196K
描述
RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)

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IRHQ563110P 数据手册

PD - 94057B

IRHQ567110

100V, Combination 2N-2P-CHANNEL

RAD-Hard^™HEXFET^®

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (LCC-28)

Product Summary

Part Number Radiation Level RDS(on)

IRHQ567110 100K Rads (Si) 0.27Ω

IRHQ563110 300K Rads (Si) 0.29Ω

CHANNEL

4.6A

-2.8A

IRHQ567110 100K Rads (Si)

IRHQ563110 300K Rads (Si)

0.96Ω

0.98Ω

LCC-28

International Rectifier’s RAD-Hard^TMHEXFET^®MOSFET

Technology provides high performance power MOSFETs

for space applications. This technology has over a decade

of proven performance and reliability in satellite applica-

tions. These devices have been characterized for both

Total Dose and Single Event Effects (SEE). The combina-

tion of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC con-

verters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and tempera-

ture stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Pre-Irradiation

Absolute Maximum Ratings ( Per Die)

Parameter

= ±12V, T = 25°C Continuous Drain Current

N-Channel

4.6

P-Channel

-2.8

Units

@ V

= ±12V, T = 100°C Continuous Drain Current

2.9

-1.8

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

18.4

-11.2

@ T = 25°C

W/°C

0.1

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current ➀

±20

47 ➀

4.6

70➀➀

-2.8

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt

Operating Junction

1.2

V/ns

dv/dt

6.1 ➀

7.1 ➀

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

0.89 (Typical)

For footnotes refer to the last page

www.irf.com

07/25/01

12 3 4 5 6 7...14

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与IRHQ563110P相关器件

型号	品牌	获取价格	描述	数据表
IRHQ563110SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHQ567110	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ567110N	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ567110P	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ567110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel and P-Channe
IRHQ567110SCS	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel and P-Channe
IRHQ567110SCV	INFINEON	获取价格	Power Field-Effect Transistor,
IRHQ57110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL
IRHQ57110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Me
IRHQ57110SCS	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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