Datasheet > IRHQ54110PBF

IRHQ54110PBF

更新时间： 2024-11-21 08:02:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	175K
描述
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28

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IRHQ54110PBF 数据手册

ꢁ

PD-94211E

IRHQ57110

100V, Quad N-CHANNEL

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

Product Summary

Part Number Radiation Level RDS(on)

IRHQ57110

IRHQ53110

IRHQ54110

100K Rads (Si)

300K Rads (Si)

500K Rads (Si)

0.27Ω

0.29Ω

4.6A

LCC-28

IRHQ58110 1000K Rads (Si)

Features:

International Rectifier’s R5^TMtechnology provides high

performance power MOSFETs for space applications.

These devices have been characterized for Single Event

Effects (SEE) with useful performance up to an LET of

80 (MeV/(mg/cm²)). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor

control. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability

of electrical parameters.

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

ESD Rating: Class 1A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings (Per Die)

Parameter

Pre-Irradiation

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

4.6

@ V

= 12V, T = 100°C Continuous Drain Current

2.9

18.4

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.1

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

4.6

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

1.2

V/ns

dv/dt

6.1

-55 to 150

Storage Temperature Range

°C

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

0.89 (Typical)

For footnotes refer to the last page

www.irf.com

05/0115

12 3 4 5 6 7 8

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与IRHQ54110PBF相关器件

型号	品牌	获取价格	描述	数据表
IRHQ563110	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ563110N	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ563110P	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ563110SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHQ567110	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ567110N	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ567110P	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ567110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel and P-Channe
IRHQ567110SCS	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel and P-Channe
IRHQ567110SCV	INFINEON	获取价格	Power Field-Effect Transistor,

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