IRHMJ8250

更新时间： 2024-09-15 04:23:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
12页	330K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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IRHMJ8250 数据手册

PD-96914

IRHMJ7250

RADIATION HARDENED

POWER MOSFET

200V, N-CHANNEL

RAD Hard^™HEXFET^®TECHNOLOGY

SURFACE MOUNT (TO-254AA Tabless)

Product Summary

Part Number Radiation Level RDS(on)

IRHMJ7250

IRHMJ3250

IRHMJ4250

100K Rads (Si) 0.10Ω

300K Rads (Si) 0.10Ω

600K Rads (Si) 0.10Ω

26A

IRHMJ8250 1000K Rads (Si) 0.10Ω

TO-254AA Tabless

International Rectifier’s RADHard HEXFET^®technology

provides high performance power MOSFETs for

space applications. This technology has over a

decade of proven performance and reliability in

satellite applications. These devices have been

characterized for both Total Dose and Single Event

Effects (SEE). The combination of low Rdson and

low gate charge reduces the power losses in

switching applications such as DC to DC converters

and motor control. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

104

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

150

W/°C

Linear Derating Factor

1.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

5.0

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

8.0 (Typical)

For footnotes refer to the last page

www.irf.com

12/24/04

12 3 4 5 6 7...12

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