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IRHMK53160 PDF预览

IRHMK53160

更新时间: 2024-11-06 01:02:23
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
8页 180K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT

IRHMK53160 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, S-CSSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
其他特性:RADIATION HARDENED外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):45 A最大漏极电流 (ID):45 A
最大漏源导通电阻:0.013 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-CSSO-G3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):208 W
最大脉冲漏极电流 (IDM):180 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRHMK53160 数据手册

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PD-97415  
RADIATION HARDENED  
IRHMK57160  
POWER MOSFET  
SURFACE MOUNT (Low-Ohmic TO-254AA)  
100V5, N-CHANNEL  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level  
IRHMK57160 100K Rads (Si)  
IRHMK53160 300K Rads (Si)  
IRHMK54160 500K Rads (Si)  
RDS(on)  
0.013Ω  
0.013Ω  
0.013Ω  
ID  
45A*  
45A*  
45A*  
45A*  
Low-Ohmic  
TO-254AA Tabless  
IRHMK58160 1000K Rads (Si) 0.013Ω  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
of low R  
and low gate charge reduces the  
DS(on)  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Electrically Isolated  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
45*  
45*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
180  
DM  
@ T = 25°C  
P
D
208  
W
W/°C  
V
C
1.67  
±20  
V
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
493  
mJ  
A
AS  
I
45  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
20.8  
6.7  
mJ  
V/ns  
AR  
dv/dt  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
8.0 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
08/27/09  

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