是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, S-CSSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
其他特性: | RADIATION HARDENED | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 45 A | 最大漏极电流 (ID): | 45 A |
最大漏源导通电阻: | 0.013 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-CSSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 208 W |
最大脉冲漏极电流 (IDM): | 180 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRHMK58160 | INFINEON |
功能相似 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
IRHMK54160 | INFINEON |
功能相似 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
IRHMK57160 | INFINEON |
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Simple Drive Requirements |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHMK54160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
IRHMK57160 | INFINEON |
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Simple Drive Requirements | |
IRHMK57160_15 | INFINEON |
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Simple Drive Requirements | |
IRHMK57160SCS | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me | |
IRHMK57260SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-254AA) | |
IRHMK57260SEPBF | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Me | |
IRHMK58130 | INFINEON |
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Power Field-Effect Transistor, | |
IRHMK58160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
IRHMK593160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-254AA) | |
IRHMK597160 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-254AA) |