Datasheet > IRHMK57160_15

IRHMK57160_15

更新时间： 2024-09-17 01:01:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	180K
描述
Simple Drive Requirements

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IRHMK57160_15 数据手册

ꢁ

PD-97415

RADIATION HARDENED

IRHMK57160

POWER MOSFET

SURFACE MOUNT (Low-Ohmic TO-254AA)

^100V5^{, N-CHANNEL}

TECHNOLOGY

Product Summary

Part Number Radiation Level

IRHMK57160 100K Rads (Si)

IRHMK53160 300K Rads (Si)

IRHMK54160 500K Rads (Si)

RDS(on)

0.013Ω

45A*

Low-Ohmic

TO-254AA Tabless

IRHMK58160 1000K Rads (Si) 0.013Ω

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

of low R

and low gate charge reduces the

DS(on)

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

45*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

180

@ T = 25°C

208

W/°C

1.67

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

493

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

20.8

6.7

V/ns

dv/dt

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

8.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

08/27/09

12 3 4 5 6 7 8

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