是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-XSSO-G3 | Reach Compliance Code: | compliant |
风险等级: | 5.7 | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 500 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 26 A |
最大漏源导通电阻: | 0.11 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XSSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 104 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHMK53160 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
IRHMK54160 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
IRHMK57160 | INFINEON |
获取价格 |
Simple Drive Requirements | |
IRHMK57160_15 | INFINEON |
获取价格 |
Simple Drive Requirements | |
IRHMK57160SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me | |
IRHMK57260SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-254AA) | |
IRHMK57260SEPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Me | |
IRHMK58130 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IRHMK58160 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
IRHMK593160 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-254AA) |