IRHMJ58160

更新时间： 2024-09-15 03:49:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	161K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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IRHMJ58160 数据手册

ꢁ

PD-96916

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (TO-254AA Tabless)

IRHMJ57160

100V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHMJ57160 100K Rads (Si)

IRHMJ53160 300K Rads (Si)

IRHMJ54160 600K Rads (Si)

0.018Ω 35A*

IRHMJ58160 1000K Rads (Si) 0.019Ω 35A*

TO-254AA Tabless

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Single Event Effect (SEE) Hardened

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

of low R

and low gate charge reduces the

DS(on)

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Hermatically Sealed

Electically Isolated

Ceramic Eyelets

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

35*

140

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

250

W/°C

2.0

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

3.4

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.7 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

12/24/04

12 3 4 5 6 7 8

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