Datasheet > IRG4CC50KB

IRG4CC50KB

更新时间： 2024-09-26 23:58:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
1页	40K
描述

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中文翻译

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数据手册

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IRG4CC50KB 数据手册

PD-91774

IRG4CC50KB

IRG4CC50KB IGBT Die in Wafer Form

600 V

Size 5

Ultra-FastSpeed

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (Min/Max)

Test Conditions

I_C= 10A, T_J= 25°C, V_GE= 15V

T_J= 25°C, I_CES= 250µA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C=250µA

T_J= 25°C, V_CE= 600V

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

4.5V Max.

600V Min.

3.0V Min., 6.0V Max.

300 µA Max.

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 11 µA Max.

T_J= 25°C, V_GE= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni / V-Ag ( 1kA-2kA-2.5kA )

99% Al, 1% Si (4 microns)

0.257" x 0.260"

Wafer Diameter:

150mm, with std. < 100 > flat

.015" + / -.003"

Wafer thickness:

Relevant Die Mechanical Dwg. Number

MinimumStreetWidth

01-5253

100 Microns

Reject Ink Dot Size

0.25mmDiameterMinimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Standard IR packaged part ( for design ) : IRG4PC50K

Die Outline

9/24/98

中文翻译

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