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IRFSL9N60ATRLPBF PDF预览

IRFSL9N60ATRLPBF

更新时间: 2024-09-09 14:51:35
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
8页 115K
描述
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

IRFSL9N60ATRLPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliant风险等级:5.16
Is Samacsys:N雪崩能效等级(Eas):290 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):9.2 A
最大漏源导通电阻:0.75 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):37 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFSL9N60ATRLPBF 数据手册

 浏览型号IRFSL9N60ATRLPBF的Datasheet PDF文件第2页浏览型号IRFSL9N60ATRLPBF的Datasheet PDF文件第3页浏览型号IRFSL9N60ATRLPBF的Datasheet PDF文件第4页浏览型号IRFSL9N60ATRLPBF的Datasheet PDF文件第5页浏览型号IRFSL9N60ATRLPBF的Datasheet PDF文件第6页浏览型号IRFSL9N60ATRLPBF的Datasheet PDF文件第7页 
PD - 91814A  
SMPS MOSFET  
IRFSL9N60A  
HEXFET® Power MOSFET  
Applications  
VDSS  
600V  
Rds(on) max  
ID  
9.2A  
l Switch Mode Power Supply ( SMPS )  
l Uninterruptable Power Supply  
l High speed power switching  
l This device is only for through hole  
application.  
0.75Ω  
Benefits  
G D S  
l Low Gate Charge Qg results in Simple  
Drive Requirement  
T O -26 2  
l Improved Gate, Avalanche and dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
9.2  
5.8  
A
37  
PD @TC = 25°C  
Power Dissipation  
170  
W
W/°C  
V
Linear Derating Factor  
1.3  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
5.0  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Applicable Off Line SMPS Topologies:  
l Active Clamped Forward  
l Main Switch  
Notes  through are on page 8  
www.irf.com  
1
12/23/98  

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