5秒后页面跳转
IRFTS9342 PDF预览

IRFTS9342

更新时间: 2024-09-15 11:15:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 223K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 

IRFTS9342 数据手册

 浏览型号IRFTS9342的Datasheet PDF文件第2页浏览型号IRFTS9342的Datasheet PDF文件第3页浏览型号IRFTS9342的Datasheet PDF文件第4页浏览型号IRFTS9342的Datasheet PDF文件第5页浏览型号IRFTS9342的Datasheet PDF文件第6页浏览型号IRFTS9342的Datasheet PDF文件第7页 
PD - 96411A  
IRFTS9342PbF  
HEXFET® Power MOSFET  
VDS  
-30  
20  
V
V
A
D
1
2
6
5
4
D
D
VGS max  
±
RDS(on) max  
(@VGS = -10V)  
40  
m
Ω
Ω
D
RDS(on) max  
(@VGS = -4.5V)  
Qg typ  
3
G
S
66  
12  
m
TSOP-6  
nC  
A
Top View  
ID  
-5.8  
(@TA= 25°C)  
Applications  
l Battery operated DC motor inverter MOSFET  
l System/Load Switch  
Features and Benefits  
Features  
Benefits  
Industry-Standard TSOP-6 Package  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
Multi-Vendor Compatibility  
Environmentally Friendlier  
Increased Reliability  
results in  
MSL1, Consumer Qualification  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Quantity  
IRFTS9342TRPbF  
TSOP-6  
Tape and Reel  
3000  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
-30  
±20  
-5.8  
-4.6  
-46  
V
V
GS  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
A
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
2.0  
D
D
W
1.3  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Notes  through „ are on page 2  
www.irf.com  
1
02/29/12  

与IRFTS9342相关器件

型号 品牌 获取价格 描述 数据表
IRFTS9342PBF INFINEON

获取价格

Industry-Standard TSOP-6 Package
IRFTS9342TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 5.8A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Met
IRFU010 SAMSUNG

获取价格

N-CHANNEL POWER MOSFET
IRFU010 INFINEON

获取价格

AVALANCHE AND dv/dt RATED
IRFU012 INFINEON

获取价格

AVALANCHE AND dv/dt RATED
IRFU012 SAMSUNG

获取价格

Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IRFU014 VISHAY

获取价格

Power MOSFET
IRFU014 SAMSUNG

获取价格

N-CHANNEL POWER MOSFET
IRFU014 INFINEON

获取价格

Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)
IRFU014 KERSEMI

获取价格

Power MOSFET