型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFTS9342TRPBF | INFINEON |
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Power Field-Effect Transistor, 5.8A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Met | |
IRFU010 | SAMSUNG |
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N-CHANNEL POWER MOSFET | |
IRFU010 | INFINEON |
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AVALANCHE AND dv/dt RATED | |
IRFU012 | INFINEON |
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AVALANCHE AND dv/dt RATED | |
IRFU012 | SAMSUNG |
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Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFU014 | VISHAY |
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Power MOSFET | |
IRFU014 | SAMSUNG |
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N-CHANNEL POWER MOSFET | |
IRFU014 | INFINEON |
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Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) | |
IRFU014 | KERSEMI |
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Power MOSFET | |
IRFU014A | FAIRCHILD |
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ADVANCED POWER MOSFET |