IRFR014, IRFU014, SiHFR014, SiHFU014
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
60
Available
• Surface Mount (IRFR014/SiHFR014)
• Straight Lead (IRFU014/SiHFU014)
• Available in Tape and Reel
• Fast Switching
RDS(on) (Ω)
VGS = 10 V
0.20
RoHS*
Qg (Max.) (nC)
11
3.1
COMPLIANT
Q
Q
gs (nC)
gd (nC)
5.8
Configuration
Single
• Ease of Paralleling
D
• Simple Drive Requirements
• Lead (Pb)-free Available
DPAK
IPAK
(TO-252)
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S
N-Channel MOSFET
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IRFR014TRPbFa
SiHFR014T-E3a
IRFR014TRa
IPAK (TO-251)
IRFU014PbF
SiHFU014-E3
IRFU014
IRFR014PbF
SiHFR014-E3
IRFR014
IRFR014TRLPbFa
SiHFR014TL-E3a
IRFR014TRLa
Lead (Pb)-free
SnPb
SiHFR014
SiHFR014TLa
SiHFR014Ta
SiHFU014
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
60
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
TC = 25 °C
TC =100°C
7.7
4.9
Continuous Drain Current
VGS at 10 V
ID
A
Pulsed Drain Currenta
IDM
31
Linear Derating Factor
0.20
0.020
47
W/°C
mJ
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
EAS
PD
T
C = 25 °C
25
W
TA = 25 °C
2.5
dV/dt
4.5
V/ns
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