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IRFU020 PDF预览

IRFU020

更新时间: 2024-11-02 12:04:59
品牌 Logo 应用领域
科盛美 - KERSEMI /
页数 文件大小 规格书
9页 4371K
描述
Power MOSFET

IRFU020 数据手册

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IRFR020, IRFU020, SiHFR020, SiHFU020  
Power MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
PRODUCT SUMMARY  
VDS (V)  
60  
RDS(on) (Ω)  
VGS = 10 V  
0.10  
• Dynamic dV/dt Rating  
Qg (Max.) (nC)  
25  
5.8  
• Surface Mount (IRFR020, SiHFR020)  
• Available in Tape and Reel  
• Fast Switching  
Q
gs (nC)  
Qgd (nC)  
11  
• Ease of Paralleling  
Configuration  
Single  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
D
DPAK  
IPAK  
(TO-252)  
(TO-251)  
DESCRIPTION  
D
D
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
S
G
S
D
G
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques.  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
SiHFR020-GE3  
IRFR020PbF  
SiHFR020-E3  
IRFR020  
DPAK (TO-252)  
SiHFR020TR-GE3  
IRFR020TRPbFa  
SiHFR020T-E3a  
IRFR020TRa  
IPAK (TO-251)  
SiHFU020-GE3  
IRFU020PbF  
SiHFU020-E3  
IRFU020  
Lead (Pb)-free and Halogen-free  
Lead (Pb)-free  
SnPb  
SiHFR020  
SiHFR020Ta  
SiHFU020  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
60  
V
20  
T
C = 25 °C  
14  
9.0  
Continuous Drain Current  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed Drain Currenta  
IDM  
56  
Linear Derating Factor  
0.33  
0.020  
91  
W/°C  
mJ  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
EAS  
PD  
TC = 25 °C  
42  
W
TA = 25 °C  
2.5  
dV/dt  
5.5  
V/ns  
°C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
260d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 Ω, IAS = 14 A (see fig. 12).  
c. ISD 17 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
www.kersemi.com  
1

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