Datasheet > IRFU110_R4941

IRFU110_R4941

更新时间： 2024-09-15 17:37:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	97K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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IRFU110_R4941 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	配置：	Single
最大漏极电流 (Abs) (ID)：	4.7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	30 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

IRFU110_R4941 数据手册

IRFR110, IRFU110

Data Sheet

January 2002

4.7A, 100V, 0.540 Ohm, N-Channel Power

MOSFETs

Features

• 4.7A, 100V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed, tested, and

guaranteed to withstand a speciﬁed level of energy in the

breakdown avalanche mode of operation. These advanced

power MOSFETs are designed for use in applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate-drive power.

These transistors can be operated directly from integrated

circuits.

• r = 0.540Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 175 C Operating Temperature

• Related Literature

Formerly developmental type TA17441.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

IRFU110

IRFR110

PACKAGE

TO-251AA

TO-252AA

BRAND

IFU110

IFR110

Symbol

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

IRFR110, IRFU110 Rev. B

12 3 4 5 6 7

中文翻译

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