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IRFU014A PDF预览

IRFU014A

更新时间: 2024-11-18 03:37:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 219K
描述
ADVANCED POWER MOSFET

IRFU014A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75雪崩能效等级(Eas):58 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):8.2 A最大漏极电流 (ID):8.2 A
最大漏源导通电阻:0.14 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):18 W
最大脉冲漏极电流 (IDM):33 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFU014A 数据手册

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IRFR/U014A  
FEATURES  
BVDSS = 60 V  
RDS(on) = 0.14  
ID = 8.2 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
D-PAK  
I-PAK  
Lower Leakage Current: 10 A (Max.) @ VDS = 60V  
µ
Lower RDS(ON): 0.097 (Typ.)  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
60  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25°C)  
Continuous Drain Current (TC=100°C)  
Drain Current-Pulsed  
8.2  
ID  
A
5.2  
IDM  
VGS  
EAS  
IAR  
(1)  
33  
A
V
Gate-to-Source Voltage  
20  
±
(2)  
(1)  
(1)  
(3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
58  
mJ  
A
8.2  
1.8  
5.5  
2.5  
18  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
*
Total Power Dissipation (TA=25°C)  
Total Power Dissipation (TC=25°C)  
Linear Derating Factor  
PD  
W
0.14  
W/°C  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
°C  
Maximum Lead Temp. for Soldering  
Purposes, 1/8 from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
RθJC  
Characteristic  
Typ.  
Max.  
Units  
Junction-to-Case  
--  
--  
--  
7.04  
50  
RθJA  
*
Junction-to-Ambient  
Junction-to-Ambient  
°C/W  
RθJA  
110  
When mounted on the minimum pad size recommended (PCB Mount).  
*
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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