IRFU110PBF

更新时间： 2024-01-31 11:36:52

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	1371K
描述
Power MOSFET

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技术参数
数据手册

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IRFU110PBF 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.92
配置：	Single	最大漏极电流 (Abs) (ID)：	4.7 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	30 W
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

IRFU110PBF 数据手册

IRFR110, IRFU110, SiHFR110, SiHFU110

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

100

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= 10 V

0.54

RoHS*

COMPLIANT

• Surface Mount (IRFR110/SiHFR110)

Q_g(Max.) (nC)

Q_gs(nC)

8.3

2.3

3.8

• Straight Lead (IRFU110/SiHFU110)

• Available in Tape and Reel

• Fast Switching

Q_gd(nC)

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

IPAK

(TO-252)

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

N-Channel MOSFET

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surcace mount applications.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR110PbF

SiHFR110-E3

IRFR110

DPAK (TO-252)

IRFR110TRLPbF^a

SiHFR110TL-E3^a

IRFR110TRL^a

DPAK (TO-252)

IRFR110TRPbF^a

SiHFR110T-E3^a

IRFR110TR^a

DPAK (TO-252)

IRFR110TRRPbF^a

SiHFR110TR-E3^a

IPAK (TO-251)

IRFU110PbF

SiHFU110-E3

IRFU110

Lead (Pb)-free

SnPb

SiHFR110

SiHFR110TL^a

SiHFR110T^a

SiHFU110

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

4.3

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

2.7

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

0.020

100

4.3

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

I_AR

E_AR

2.5

T_C= 25 °C

T_A= 25 °C

P_D

2.5

dV/dt

5.5

V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91265

S-81394-Rev. A, 21-Jul-08

www.vishay.com

12 3 4 5 6 7 8

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