Datasheet > IRFSL9N60ATRRPBF

IRFSL9N60ATRRPBF

更新时间： 2024-11-19 09:32:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	115K
描述
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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IRFSL9N60ATRRPBF 数据手册

PD - 91814A

SMPS MOSFET

IRFSL9N60A

HEXFET^®Power MOSFET

Applications

V_DSS

600V

Rds(on) max

I_D

9.2A

l Switch Mode Power Supply ( SMPS )

l Uninterruptable Power Supply

l High speed power switching

l This device is only for through hole

application.

0.75Ω

Benefits

G D S

l Low Gate Charge Qg results in Simple

Drive Requirement

T O -26 2

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.2

5.8

P_D@T_C= 25°C

Power Dissipation

170

W/°C

Linear Derating Factor

1.3

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Applicable Off Line SMPS Topologies:

l Active Clamped Forward

l Main Switch

Notes through ꢀ are on page 8

www.irf.com

12/23/98

12 3 4 5 6 7 8

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