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IRFTS8342TRPBF PDF预览

IRFTS8342TRPBF

更新时间: 2024-11-02 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 230K
描述
Power Field-Effect Transistor, 8.2A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

IRFTS8342TRPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, TSOP-6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.12Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):8.2 A最大漏极电流 (ID):8.2 A
最大漏源导通电阻:0.019 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):80 A子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFTS8342TRPBF 数据手册

 浏览型号IRFTS8342TRPBF的Datasheet PDF文件第2页浏览型号IRFTS8342TRPBF的Datasheet PDF文件第3页浏览型号IRFTS8342TRPBF的Datasheet PDF文件第4页浏览型号IRFTS8342TRPBF的Datasheet PDF文件第5页浏览型号IRFTS8342TRPBF的Datasheet PDF文件第6页浏览型号IRFTS8342TRPBF的Datasheet PDF文件第7页 
PD - 97728A  
IRFTS8342PbF  
HEXFET® Power MOSFET  
VDS  
VGS  
30  
20  
V
V
±
RDS(on) max  
(@VGS = 10V)  
19  
m
RDS(on) max  
(@VGS = 4.5V)  
29  
4.8  
8.2  
m
TSOP-6  
Qg (typical)  
nC  
A
ID  
(@TA = 25°C)  
Applications  
System/Load Switch  
FeaturesandBenefits  
Features  
Resulting Benefits  
Industry-Standard TSOP-6 Package  
Multi-Vendor Compatibility  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Consumer Qualification  
Environmentally Friendlier  
Increased Reliability  
Orderable part number  
Package Type  
Standard Pack  
Form  
Tape and Reel  
Note  
Quantity  
3000  
IRFTS8342TRPBF  
TSOP-6  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Drain-to-Source Voltage  
Units  
VDS  
V
±20  
8.2  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
6.6  
80  
A
@ TA = 70°C  
DM  
2.0  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
D
D
W
W/°C  
°C  
1.3  
Power Dissipation  
0.02  
Linear Derating Factor  
Operating Junction and  
-55 to + 150  
T
T
J
Storage Temperature Range  
STG  
Notes  through „ are on page 2  
www.irf.com  
1
02/23/12  

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