IRFR3303

更新时间： 2024-11-25 22:40:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	114K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFR3303 数据手册

PD - 9.1642A

IRFR/U3303

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Surface Mount (IRFR3303)

l Straight Lead (IRFU3033)

l Advanced Process Technology

l Fast Switching

V_DSS= 30V

R_DS(on)= 0.031Ω

I_D= 33Aꢀ

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

I-Pa k

D -Pa k

T O -2 52 A A

TO -2 5 1 AA

The D-Pak is designed for surface mounting using vapor

phase, infrared, orwavesolderingtechniques. Thestraight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

33ꢀ

21ꢀ

120

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.45

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.7

V/ns

5.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.2

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

8/25/97

12 3 4 5 6 7...10

中文翻译

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IRFR3303 替代型号

型号	品牌	替代类型	描述	数据表
IRFR3303TRPBF	INFINEON	功能相似	Ultra Low On-Resistance
IRFR3303PBF	INFINEON	功能相似	HEXFET Power MOSFET

与IRFR3303相关器件

型号	品牌	获取价格	描述	数据表
IRFR3303HR	INFINEON	获取价格	暂无描述
IRFR3303PBF	KERSEMI	获取价格	HEXFET Power MOSFET
IRFR3303PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3303TR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 33A I(D) \| TO-252AA
IRFR3303TRL	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR3303TRLPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRFR3303TRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRFR3303TRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 33A I(D) \| TO-252AA
IRFR330A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 4.5A I(D) \| TO-252AA
IRFR330B	FAIRCHILD	获取价格	400V N-Channel MOSFET