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IRFP4368PBF PDF预览

IRFP4368PBF

更新时间: 2024-01-14 22:15:46
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 278K
描述
HEXFET Power MOSFET

IRFP4368PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.22Samacsys Description:International Rectifier IRFP4368PBF N-channel MOSFET Transistor, 350 A, 75 V, 3-Pin TO-247AC
雪崩能效等级(Eas):430 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):350 A最大漏极电流 (ID):195 A
最大漏源导通电阻:0.00185 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):520 W
最大脉冲漏极电流 (IDM):1280 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

IRFP4368PBF 数据手册

 浏览型号IRFP4368PBF的Datasheet PDF文件第2页浏览型号IRFP4368PBF的Datasheet PDF文件第3页浏览型号IRFP4368PBF的Datasheet PDF文件第4页浏览型号IRFP4368PBF的Datasheet PDF文件第5页浏览型号IRFP4368PBF的Datasheet PDF文件第6页浏览型号IRFP4368PBF的Datasheet PDF文件第7页 
PD - 97322  
IRFP4368PbF  
Applications  
l High Efficiency Synchronous Rectification in  
HEXFET® Power MOSFET  
SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
D
S
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
75V  
1.46mΩ  
1.85mΩ  
G
350A  
c
ID (Package Limited)  
195A  
Benefits  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche SOA  
D
l Enhanced body diode dV/dt and dI/dt  
Capability  
S
D
G
TO-247AC  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
350c  
250c  
195  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
A
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
Pulsed Drain Current d  
1280  
520  
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
3.4  
W/°C  
V
VGS  
20  
Gate-to-Source Voltage  
13  
Peak Diode Recovery f  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lbxin (1.1Nxm)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy e  
EAS (Thermally limited)  
430  
mJ  
A
Avalanche Currentꢀd  
IAR  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy g  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case k  
Typ.  
–––  
Max.  
0.29  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
0.24  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
jk  
www.irf.com  
1
06/02/08  

IRFP4368PBF 替代型号

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